Advanced Power Electronics Corp. has announced two power MOSFETs well-suited for battery management and protection applications, the AP9922GEO-HF-3 and AP9923GEO-HF-3, dual n- and dual p-channel enhancement-mode products respectively.
Both products feature low on-resistance, 16mΩ for the AP9922GEO-HF-3 and 2 5mΩ for the AP9923GEO-HF-3, and both devices are capable of operating with gate drive down to 1.8V. RoHS-compliant and halogen-free, the devices are available in the small, thin TSSOP-8 package.
